| PART |
Description |
Maker |
| TXN05 TXN100 TYN40 TYN80K TXN058 TXN05G TXN05K TXN |
THYRISTORS
V(drm): 50V; 8A; glass passivated thyristor
V(drm): 1000V; 8A; glass passivated thyristor
V(drm): 100V; 8A; glass passivated thyristor
V(drm): 200V; 8A; glass passivated thyristor
V(drm): 400V; 8A; glass passivated thyristor
V(drm): 600V; 8A; glass passivated thyristor
V(drm): 800V; 8A; glass passivated thyristor
|
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| GBL400G GBL401G GBL406G |
4.0Amp GLASS PASSIVATED BRIGGE Rectifiers GLASS PASSIVATED
|
First Components International
First Components Intern...
|
| 1N5393GP 1N5399GP 1N5391GP 1N5392GP 1N5394GP 1N539 |
Glass Passivated Junction Rectifier(????荤?缁???存???
Glass Passivated Junction Rectifier(钝化玻璃结型整流 结玻璃钝化整流（钝化玻璃结型整流器）
GLASS PASSIVATED JUNCTION RECTIFIER 玻璃钝化整流
|
GE Security, Inc.
GE[General Semiconductor]
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| GL34M GL34A GL34B GL34D GL34G GL34J GL34K |
From old datasheet system
MINI-MELF glass passivated junction Diodes - Silicon passivated type
|
FORMOSA[Formosa MS]
|
| GPP20A GPP20B GPP20D GPP20G GPP20J GPP20K GPP20M |
Glass Passivated Junction Rectifiers 玻璃钝化结整流器
Glass Passivated Junction Rectifiers, Forward Current 2.0A
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| MUR1610CT MUR1610GD MUR1610N MUR1610D MUR1620CA MU |
(MUR1605 - MUR1660) 16.0 Ampere Heatsink Glass Passivated Ultra Fast Recovery Rectifier
(MUR1605 - MUR1660) 16.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers
|
Thinki Semiconductor
|
| FR155G FR157G FR151G FR152G FR153G FR154G FR156G |
GLASS PASSIVATED FAST RECOVERY RECTIFIER 玻璃钝化快恢复整
GLASS PASSIVATED FAST RECOVERY RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.5A
|
Shanghai Sunrise Electronics Co., LTD.
SSE[Shanghai Sunrise Electronics]
|
| FB380-C1500RG FB80-C1500RG FB40-C1500RG FB250-C150 |
900 V, 1.5 A, fast recovery glass passivated bridge rectifier
FAST RECOVERY GLASS PASSIVATED BRIDGE RECTIFIERS 快恢复玻璃钝化桥式整流器
|
Electronics Industry Public Company Limited
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
| FR301G FR307G FR302G FR303G FR304G FR305G FR306G |
GLASS PASSIVATED FAST RECOVERY RECTIFIER 玻璃钝化快恢复整
GLASS PASSIVATED FAST RECOVERY RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 3.0A
|
Bytes
Shanghai Sunrise Electronics Co., LTD.
SSE[Shanghai Sunrise Electronics]
|
| GBLA02 GBLA10 GBLA005 GBLA01 GBLA04 GBLA06 GBLA08 |
Glass Passivated Single-Phase Bridge Rectifiers
Glass Passivated Single-Phase Bridge Rectifier, Forward Current 4.0 A
|
VISAY[Vishay Siliconix]
|
